RDR005N25TL Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: MOSFET N-CH 250V 500MA TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 8.8Ohm @ 250mA, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 25 V
на замовлення 3576 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 48.43 грн |
| 10+ | 40.52 грн |
| 100+ | 28.07 грн |
| 500+ | 22.01 грн |
| 1000+ | 18.73 грн |
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Технічний опис RDR005N25TL Rohm Semiconductor
Description: MOSFET N-CH 250V 500MA TSMT3, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Rds On (Max) @ Id, Vgs: 8.8Ohm @ 250mA, 10V, Power Dissipation (Max): 540mW (Ta), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: TSMT3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 25 V.
Інші пропозиції RDR005N25TL
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| RDR005N25TL | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 250V 500MA TSMT3 Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 8.8Ohm @ 250mA, 10V Power Dissipation (Max): 540mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TSMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 25 V |
товару немає в наявності |
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RDR005N25TL | Виробник : ROHM Semiconductor |
MOSFET Nch 250V 500mA MOSFET |
товару немає в наявності |