RDX045N60FU6 Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 4.5A TO220FM
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
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Технічний опис RDX045N60FU6 Rohm Semiconductor
Description: MOSFET N-CH 600V 4.5A TO220FM, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220FM, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 35W (Tc), Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.25A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), FET Type: N-Channel.
Інші пропозиції RDX045N60FU6
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
RDX045N60FU6 | ROHM Semiconductor |
MOSFET MOSFET; POWER; SWITCHING; Nch; 600V; 4.5 Id(A); Pkg TO-220FM |
товару немає в наявності |
В кошику од. на суму грн. |
| RDX045N60FU6 |
|
Виробник: ROHM Semiconductor
MOSFET MOSFET; POWER; SWITCHING; Nch; 600V; 4.5 Id(A); Pkg TO-220FM
MOSFET MOSFET; POWER; SWITCHING; Nch; 600V; 4.5 Id(A); Pkg TO-220FM
товару немає в наявності
В кошику
од. на суму грн.