| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 43.65 грн |
| 11+ | 29.53 грн |
| 100+ | 17.26 грн |
| 500+ | 13.60 грн |
| 1000+ | 10.70 грн |
| 1500+ | 8.77 грн |
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Технічний опис RF101L2SDDTE25 ROHM Semiconductor
Description: DIODE GEN PURP 200V 1A PMDS, Current - Reverse Leakage @ Vr: 10 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 200 V, Part Status: Not For New Designs, Operating Temperature - Junction: 150°C (Max), Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: PMDS, Current - Average Rectified (Io): 1A, Technology: Standard, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AC, SMA, Packaging: Tape & Reel (TR).
Інші пропозиції RF101L2SDDTE25 за ціною від 14.77 грн до 54.36 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RF101L2SDDTE25 | Rohm Semiconductor |
 Description: DIODE GEN PURP 200V 1A PMDSPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 1216 шт: термін постачання 21-31 дні (днів) |
|
| RF101L2SDDTE25 |
|
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 1A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 1A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 1216 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.36 грн |
| 10+ | 32.08 грн |
| 100+ | 20.68 грн |
| 500+ | 14.77 грн |