RF305BM6SFHTL Rohm Semiconductor

Description: DIODE GEN PURP 600V 3A TO252, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Active, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: TO-252, Current - Average Rectified (Io): 3A, Technology: Standard, Reverse Recovery Time (trr): 30 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).