RF3L05250CB4 STMicroelectronics
Виробник: STMicroelectronics
Description: 250 W 28/32 V RF POWER LDMOS TRA
Current - Test: 100 mA
Voltage - Test: 28 V
Voltage - Rated: 90 V
Part Status: Active
Supplier Device Package: LBB
Technology: LDMOS
Gain: 18dB
Power - Output: 250W
Frequency: 1GHz
Mounting Type: Chassis Mount
Current Rating (Amps): 1µA
Package / Case: LBB
Packaging: Cut Tape (CT)
Відгуки про товар
Написати відгук
Технічний опис RF3L05250CB4 STMicroelectronics
Description: 250 W 28/32 V RF POWER LDMOS TRA, Current - Test: 100 mA, Voltage - Test: 28 V, Voltage - Rated: 90 V, Part Status: Active, Supplier Device Package: LBB, Technology: LDMOS, Gain: 18dB, Power - Output: 250W, Frequency: 1GHz, Mounting Type: Chassis Mount, Current Rating (Amps): 1µA, Package / Case: LBB, Packaging: Tape & Reel (TR).
Інші пропозиції RF3L05250CB4
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
RF3L05250CB4 | Виробник : STMicroelectronics |
Description: 250 W 28/32 V RF POWER LDMOS TRA Current - Test: 100 mA Voltage - Test: 28 V Voltage - Rated: 90 V Part Status: Active Supplier Device Package: LBB Technology: LDMOS Gain: 18dB Power - Output: 250W Frequency: 1GHz Mounting Type: Chassis Mount Current Rating (Amps): 1µA Package / Case: LBB Packaging: Tape & Reel (TR) |
товару немає в наявності |
|
 |
RF3L05250CB4 | Виробник : STMicroelectronics |
RF MOSFET Transistors 250 W 28/32 V RF power LDMOS transistor from HF to 1 GHz |
товару немає в наявності |