RF4C100BCTCR ROHM Semiconductor
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 73.45 грн |
| 10+ | 51.44 грн |
| 100+ | 30.31 грн |
| 500+ | 23.61 грн |
| 1000+ | 21.47 грн |
| 3000+ | 18.71 грн |
| 6000+ | 17.26 грн |
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Технічний опис RF4C100BCTCR ROHM Semiconductor
Description: MOSFET P-CH 20V 10A HUML2020L8, Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: HUML2020L8, Vgs(th) (Max) @ Id: 1.2V @ 1mA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerUDFN, Packaging: Tape & Reel (TR).
Інші пропозиції RF4C100BCTCR за ціною від 25.42 грн до 86.98 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
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RF4C100BCTCR | Rohm Semiconductor |
 Description: MOSFET P-CH 20V 10A HUML2020L8Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 4.5V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 1.2V @ 1mA Power Dissipation (Max): 2W (Ta) |
на замовлення 668 шт: термін постачання 21-31 дні (днів) |
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| RF4C100BCTCR |
|
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 10A HUML2020L8
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 2W (Ta)
Description: MOSFET P-CH 20V 10A HUML2020L8
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 2W (Ta)
на замовлення 668 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 86.98 грн |
| 10+ | 52.87 грн |
| 100+ | 34.83 грн |
| 500+ | 25.42 грн |