RF4E060AJTCR Rohm Semiconductor

Description: MOSFET N-CH 30V 6A HUML2020L8, Packaging: Tape & Reel (TR), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 37mOhm @ 6A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerUDFN, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: HUML2020L8.