RF4E100AJTCR Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A HUML2020L8
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 4.5V
Відгуки про товар
Написати відгук
Технічний опис RF4E100AJTCR Rohm Semiconductor
Description: MOSFET N-CH 30V 10A HUML2020L8, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerUDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Part Status: Active, Supplier Device Package: HUML2020L8, Vgs(th) (Max) @ Id: 1.5V @ 1mA, Power Dissipation (Max): 2W (Tc), Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 4.5V.
Інші пропозиції RF4E100AJTCR за ціною від 19.67 грн до 97.86 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RF4E100AJTCR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 36A; 2W; DFN2020-8S Power dissipation: 2W Kind of package: reel; tape Case: DFN2020-8S Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 13nC On-state resistance: 12.4mΩ Drain current: 10A Pulsed drain current: 36A Gate-source voltage: ±12V Drain-source voltage: 30V |
на замовлення 2780 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||
 |
RF4E100AJTCR | ROHM Semiconductor |
MOSFETs Nch 30V 10A Si MOSFET |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
RF4E100AJTCR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 10A HUML2020L8 Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 4.5V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V |
на замовлення 5915 шт: термін постачання 21-31 дні (днів) |
|
| RF4E100AJTCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 36A; 2W; DFN2020-8S
Power dissipation: 2W
Kind of package: reel; tape
Case: DFN2020-8S
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 13nC
On-state resistance: 12.4mΩ
Drain current: 10A
Pulsed drain current: 36A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 36A; 2W; DFN2020-8S
Power dissipation: 2W
Kind of package: reel; tape
Case: DFN2020-8S
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 13nC
On-state resistance: 12.4mΩ
Drain current: 10A
Pulsed drain current: 36A
Gate-source voltage: ±12V
Drain-source voltage: 30V
на замовлення 2780 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 92.17 грн |
| 10+ | 53.93 грн |
| 100+ | 35.90 грн |
| 500+ | 28.42 грн |
| 1000+ | 26.01 грн |
| RF4E100AJTCR |
|
Виробник: ROHM Semiconductor
MOSFETs Nch 30V 10A Si MOSFET
MOSFETs Nch 30V 10A Si MOSFET
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 95.84 грн |
| 10+ | 58.83 грн |
| 100+ | 33.96 грн |
| 500+ | 26.72 грн |
| 1000+ | 24.16 грн |
| 3000+ | 21.19 грн |
| 6000+ | 19.67 грн |
| RF4E100AJTCR |
|
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 4.5V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V
Description: MOSFET N-CH 30V 10A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 4.5V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V
на замовлення 5915 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 97.86 грн |
| 10+ | 59.08 грн |
| 100+ | 39.14 грн |
| 500+ | 28.70 грн |
| 1000+ | 26.11 грн |