RF4L055GNTCR Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 5.5A HUML2020L8
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 25.85 грн |
| 6000+ | 23.10 грн |
| 9000+ | 22.18 грн |
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Технічний опис RF4L055GNTCR Rohm Semiconductor
Description: MOSFET N-CH 60V 5.5A HUML2020L8, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: HUML2020L8, Vgs(th) (Max) @ Id: 2.7V @ 1mA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerUDFN, Packaging: Tape & Reel (TR).
Інші пропозиції RF4L055GNTCR за ціною від 24.78 грн до 98.63 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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RF4L055GNTCR | ROHM Semiconductor |
MOSFETs Transistor, MOSFET Nch, 60V(Vdss), 5.5A(Id), (4.5V Drive) |
на замовлення 1953 шт: термін постачання 21-30 дні (днів) |
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RF4L055GNTCR | Rohm Semiconductor |
Description: MOSFET N-CH 60V 5.5A HUML2020L8 Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.7V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 30 V |
на замовлення 13577 шт: термін постачання 21-31 дні (днів) |
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| RF4L055GNTCR |
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Виробник: ROHM Semiconductor
MOSFETs Transistor, MOSFET Nch, 60V(Vdss), 5.5A(Id), (4.5V Drive)
MOSFETs Transistor, MOSFET Nch, 60V(Vdss), 5.5A(Id), (4.5V Drive)
на замовлення 1953 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 60.97 грн |
| 10+ | 54.70 грн |
| 100+ | 33.27 грн |
| 500+ | 27.34 грн |
| 1000+ | 24.78 грн |
| RF4L055GNTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 5.5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 30 V
Description: MOSFET N-CH 60V 5.5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 30 V
на замовлення 13577 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 98.63 грн |
| 10+ | 60.35 грн |
| 100+ | 39.99 грн |
| 500+ | 29.34 грн |
| 1000+ | 26.71 грн |