| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 95.04 грн |
| 10+ | 58.99 грн |
| 100+ | 33.96 грн |
| 500+ | 26.51 грн |
| 1000+ | 24.16 грн |
| 3000+ | 23.61 грн |
| 6000+ | 19.54 грн |
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Технічний опис RF4L070BGTCR ROHM Semiconductor
Description: NCH 60V 7A, HUML2020L8, POWER MO, Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: DFN2020-8S, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerUDFN, Packaging: Tape & Reel (TR).
Інші пропозиції RF4L070BGTCR за ціною від 25.94 грн до 97.08 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RF4L070BGTCR | Rohm Semiconductor |
 Description: NCH 60V 7A, HUML2020L8, POWER MOInput Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DFN2020-8S Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Packaging: Cut Tape (CT) |
на замовлення 2139 шт: термін постачання 21-31 дні (днів) |
|
| RF4L070BGTCR |
|
Виробник: Rohm Semiconductor
Description: NCH 60V 7A, HUML2020L8, POWER MO
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020-8S
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
Description: NCH 60V 7A, HUML2020L8, POWER MO
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020-8S
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
на замовлення 2139 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 97.08 грн |
| 10+ | 58.71 грн |
| 100+ | 38.90 грн |
| 500+ | 28.51 грн |
| 1000+ | 25.94 грн |