RF4P025ATTCR Rohm Semiconductor

Description: PCH -100V -2.5A POWER MOSFET, Rds On (Max) @ Id, Vgs: 260mOhm @ 2.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: HUML2020L8, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 2W (Ta), Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerUDFN, Packaging: Tape & Reel (TR).