RF4P060BGTCR ROHM Semiconductor
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 74.82 грн |
| 10+ | 49.14 грн |
| 100+ | 27.96 грн |
| 500+ | 21.61 грн |
| 1000+ | 20.57 грн |
| 6000+ | 19.12 грн |
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Технічний опис RF4P060BGTCR ROHM Semiconductor
Description: NCH 100V 6A, HUML2020L8, POWER M, Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: DFN2020-8S, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 53mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerUDFN, Packaging: Tape & Reel (TR).
Інші пропозиції RF4P060BGTCR за ціною від 20.78 грн до 79.99 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RF4P060BGTCR | Rohm Semiconductor |
 Description: NCH 100V 6A, HUML2020L8, POWER MInput Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DFN2020-8S Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 53mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Packaging: Cut Tape (CT) |
на замовлення 2271 шт: термін постачання 21-31 дні (днів) |
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| RF4P060BGTCR |
|
Виробник: Rohm Semiconductor
Description: NCH 100V 6A, HUML2020L8, POWER M
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020-8S
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
Description: NCH 100V 6A, HUML2020L8, POWER M
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020-8S
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
на замовлення 2271 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 79.99 грн |
| 10+ | 48.09 грн |
| 100+ | 31.54 грн |
| 500+ | 22.93 грн |
| 1000+ | 20.78 грн |