| Кількість | Ціна |
|---|---|
| 5+ | 73.26 грн |
| 10+ | 52.14 грн |
| 100+ | 30.18 грн |
| 500+ | 23.85 грн |
| 1000+ | 21.28 грн |
| 3000+ | 18.36 грн |
| 6000+ | 17.32 грн |
Відгуки про товар
Написати відгук
Технічний опис RF6C055BCTCR ROHM Semiconductor
Description: MOSFET P-CHANNEL 20V 5.5A TUMT6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), Rds On (Max) @ Id, Vgs: 25.8mOhm @ 5.5A, 4.5V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 1mA, Supplier Device Package: TUMT6, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 10 V.
Інші пропозиції RF6C055BCTCR за ціною від 21.32 грн до 75.89 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RF6C055BCTCR | Виробник : Rohm Semiconductor |
 Description: MOSFET P-CHANNEL 20V 5.5A TUMT6Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 25.8mOhm @ 5.5A, 4.5V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: TUMT6 Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 10 V |
на замовлення 2710 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
|
RF6C055BCTCR | Виробник : Rohm Semiconductor |
Description: MOSFET P-CHANNEL 20V 5.5A TUMT6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 25.8mOhm @ 5.5A, 4.5V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: TUMT6 Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 10 V |
товару немає в наявності |
|||||||||||||
| RF6C055BCTCR | Виробник : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; Idm: -18A; 1W; SOT363T Case: SOT363T Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -18A Drain current: -5.5A Gate charge: 15.2nC On-state resistance: 25.8mΩ Power dissipation: 1W Gate-source voltage: ±8V |
товару немає в наявності |