| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 72.73 грн |
| 10+ | 51.76 грн |
| 100+ | 29.96 грн |
| 500+ | 23.68 грн |
| 1000+ | 21.12 грн |
| 3000+ | 18.22 грн |
| 6000+ | 17.19 грн |
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Технічний опис RF6C055BCTCR ROHM Semiconductor
Description: MOSFET P-CHANNEL 20V 5.5A TUMT6, Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Supplier Device Package: TUMT6, Vgs(th) (Max) @ Id: 1.2V @ 1mA, Power Dissipation (Max): 1W (Tc), Rds On (Max) @ Id, Vgs: 25.8mOhm @ 5.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Інші пропозиції RF6C055BCTCR за ціною від 21.17 грн до 75.33 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RF6C055BCTCR | Rohm Semiconductor |
 Description: MOSFET P-CHANNEL 20V 5.5A TUMT6Packaging: Cut Tape (CT) Vgs(th) (Max) @ Id: 1.2V @ 1mA Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 25.8mOhm @ 5.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 4.5V Supplier Device Package: TUMT6 |
на замовлення 2710 шт: термін постачання 21-31 дні (днів) |
|
| RF6C055BCTCR |
|
Виробник: Rohm Semiconductor
Description: MOSFET P-CHANNEL 20V 5.5A TUMT6
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 5.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Supplier Device Package: TUMT6
Description: MOSFET P-CHANNEL 20V 5.5A TUMT6
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 5.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Supplier Device Package: TUMT6
на замовлення 2710 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 75.33 грн |
| 10+ | 48.99 грн |
| 100+ | 32.13 грн |
| 500+ | 23.35 грн |
| 1000+ | 21.17 грн |