RF6C055BCTCR Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: MOSFET P-CHANNEL 20V 5.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 5.5A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: TUMT6
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 10 V
на замовлення 2710 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 78.99 грн |
| 10+ | 51.36 грн |
| 100+ | 33.69 грн |
| 500+ | 24.49 грн |
| 1000+ | 22.19 грн |
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Технічний опис RF6C055BCTCR Rohm Semiconductor
Description: MOSFET P-CHANNEL 20V 5.5A TUMT6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), Rds On (Max) @ Id, Vgs: 25.8mOhm @ 5.5A, 4.5V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 1mA, Supplier Device Package: TUMT6, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 10 V.
Інші пропозиції RF6C055BCTCR за ціною від 18.74 грн до 79.31 грн
| Фото | Назва | Виробник | Інформація |
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RF6C055BCTCR | Виробник : ROHM Semiconductor |
MOSFETs Pch -20V -5.5A Si MOSFET |
на замовлення 1933 шт: термін постачання 21-30 дні (днів) |
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| RF6C055BCTCR | Виробник : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; Idm: -18A; 1W; SOT363T Case: SOT363T Mounting: SMD Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -18A Drain current: -5.5A Gate charge: 15.2nC On-state resistance: 25.8mΩ Power dissipation: 1W Gate-source voltage: ±8V кількість в упаковці: 1 шт |
товару немає в наявності |
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RF6C055BCTCR | Виробник : Rohm Semiconductor |
Description: MOSFET P-CHANNEL 20V 5.5A TUMT6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 25.8mOhm @ 5.5A, 4.5V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: TUMT6 Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 10 V |
товару немає в наявності |
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| RF6C055BCTCR | Виробник : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; Idm: -18A; 1W; SOT363T Case: SOT363T Mounting: SMD Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -18A Drain current: -5.5A Gate charge: 15.2nC On-state resistance: 25.8mΩ Power dissipation: 1W Gate-source voltage: ±8V |
товару немає в наявності |