Технічний опис RFD10P03LSM module
Description: MOSFET P-CH 30V 10A TO252-3, Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 2V @ 250µA, Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 5V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube.
Інші пропозиції RFD10P03LSM
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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RFD10P03LSM | Виробник : onsemi |
 Description: MOSFET P-CH 30V 10A TO252-3Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 2V @ 250µA Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 5V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube |
товару немає в наявності |