Технічний опис RFD10P03LSM module
Description: MOSFET P-CH 30V 10A TO252-3, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 5V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-252AA, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 25 V.
Інші пропозиції RFD10P03LSM
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RFD10P03LSM | Виробник : onsemi |
![]() Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 25 V |
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