RFD16N02L Harris Corporation
Виробник: Harris Corporation
Description: 16A, 20V, 0.022 OHM, N-CHANNEL L
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: I-PAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 16A, 5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
| Кількість | Ціна |
|---|---|
| 606+ | 39.56 грн |
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Технічний опис RFD16N02L Harris Corporation
Description: 16A, 20V, 0.022 OHM, N-CHANNEL L, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Active, Supplier Device Package: I-PAK, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 90W (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 16A, 5V, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Bulk.