RFD20N03SM Harris Corporation

Description: N-CHANNEL POWER MOSFET, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-252 (DPAK), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 90W (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Bulk.