RFL1N12 Harris Corporation

Description: N-CHANNEL POWER MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V, Drain to Source Voltage (Vdss): 120 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-205AF (TO-39), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 8.33W (Tc), Rds On (Max) @ Id, Vgs: 1.9Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-205AF Metal Can, Packaging: Bulk.