RFM12P08 Harris Corporation
Виробник: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Bulk
Відгуки про товар
Написати відгук
Технічний опис RFM12P08 Harris Corporation
Description: P-CHANNEL POWER MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-3, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 100W (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-204AA, TO-3, Packaging: Bulk.