Технічний опис RFM25N06 MOT
Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-204AA, TO-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 12.5A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V.
Інші пропозиції RFM25N06
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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RFM25N06 | Виробник : Harris Corporation |
 Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 12.5A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V |
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