RFN1L7STE25 Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 700V 800MA PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 700 V
Description: DIODE GEN PURP 700V 800MA PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 700 V
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Технічний опис RFN1L7STE25 Rohm Semiconductor
Description: DIODE GEN PURP 700V 800MA PMDS, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 80 ns, Technology: Standard, Current - Average Rectified (Io): 800mA, Supplier Device Package: PMDS, Operating Temperature - Junction: 150°C (Max), Voltage - DC Reverse (Vr) (Max): 700 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 800 mA, Current - Reverse Leakage @ Vr: 1 µA @ 700 V.
Інші пропозиції RFN1L7STE25
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RFN1L7STE25 | Виробник : Rohm Semiconductor |
Description: DIODE GEN PURP 700V 800MA PMDS Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Technology: Standard Current - Average Rectified (Io): 800mA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 700 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 800 mA Current - Reverse Leakage @ Vr: 1 µA @ 700 V |
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RFN1L7STE25 | Виробник : ROHM Semiconductor |
 Diodes - General Purpose, Power, Switching Diode Switching 700V 0.8A |
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