RFN3BM2SFHTL Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 3A TO252
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q101
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Технічний опис RFN3BM2SFHTL Rohm Semiconductor
Description: DIODE GEN PURP 200V 3A TO252, Current - Reverse Leakage @ Vr: 10 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A, Voltage - DC Reverse (Vr) (Max): 200 V, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: TO-252, Current - Average Rectified (Io): 3A, Technology: Standard, Reverse Recovery Time (trr): 25 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції RFN3BM2SFHTL за ціною від 37.58 грн до 104.70 грн
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RFN3BM2SFHTL | Rohm Semiconductor |
Description: DIODE GEN PURP 200V 3A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 4900 шт: термін постачання 21-31 дні (днів) |
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RFN3BM2SFHTL | ROHM Semiconductor |
Diodes - General Purpose, Power, Switching 200V Vrm 3A Io Recovery Diode |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
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| RFN3BM2SFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 94.75 грн |
| 10+ | 74.56 грн |
| 100+ | 57.99 грн |
| 500+ | 46.13 грн |
| 1000+ | 37.58 грн |
| RFN3BM2SFHTL |
|
Виробник: ROHM Semiconductor
Diodes - General Purpose, Power, Switching 200V Vrm 3A Io Recovery Diode
Diodes - General Purpose, Power, Switching 200V Vrm 3A Io Recovery Diode
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 104.70 грн |
| 10+ | 90.50 грн |
| 100+ | 60.89 грн |
| 500+ | 50.33 грн |
| 1000+ | 39.69 грн |
| 2500+ | 38.45 грн |
| 5000+ | 37.97 грн |