RFN6BGE2DTL Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: SUPER FAST RECOVERY DIODE. RFN6B
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
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Технічний опис RFN6BGE2DTL Rohm Semiconductor
Description: SUPER FAST RECOVERY DIODE. RFN6B, Part Status: Active, Operating Temperature - Junction: 150°C, Supplier Device Package: TO-252GE, Current - Average Rectified (Io) (per Diode): 3A, Diode Configuration: 1 Pair Common Cathode, Technology: Standard, Reverse Recovery Time (trr): 25 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 10 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A, Voltage - DC Reverse (Vr) (Max): 200 V.
Інші пропозиції RFN6BGE2DTL за ціною від 41.33 грн до 103.84 грн
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RFN6BGE2DTL | Rohm Semiconductor |
Description: SUPER FAST RECOVERY DIODE. RFN6B Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: TO-252GE Current - Average Rectified (Io) (per Diode): 3A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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RFN6BGE2DTL | ROHM Semiconductor |
Diodes - General Purpose, Power, Switching SUPER FAST RECOVERY DIODE |
на замовлення 2483 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| RFN6BGE2DTL |
|
Виробник: Rohm Semiconductor
Description: SUPER FAST RECOVERY DIODE. RFN6B
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: SUPER FAST RECOVERY DIODE. RFN6B
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 103.84 грн |
| 10+ | 82.01 грн |
| 100+ | 63.79 грн |
| 500+ | 50.74 грн |
| 1000+ | 41.33 грн |
| RFN6BGE2DTL |
|
Виробник: ROHM Semiconductor
Diodes - General Purpose, Power, Switching SUPER FAST RECOVERY DIODE
Diodes - General Purpose, Power, Switching SUPER FAST RECOVERY DIODE
на замовлення 2483 шт:
термін постачання 21-30 дні (днів)