RFP10N12L Harris Corporation
Виробник: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Supplier Device Package: TO-220-3
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5A, 5V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
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Технічний опис RFP10N12L Harris Corporation
Description: N-CHANNEL POWER MOSFET, Supplier Device Package: TO-220-3, Power Dissipation (Max): 60W (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 5A, 5V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V, Drain to Source Voltage (Vdss): 120 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 5V.