Технічний опис RFP22N10 FAIRCHILD
Description: MOSFET N-CH 100V 22A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 22A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V.
Інші пропозиції RFP22N10
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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RFP22N10 | Виробник : ON Semiconductor |
 Trans MOSFET N-CH Si 100V 22A 3-Pin(3+Tab) TO-220AB |
товару немає в наявності |
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RFP22N10 | Виробник : onsemi |
Description: MOSFET N-CH 100V 22A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 22A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V |
товару немає в наявності |
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RFP22N10 | Виробник : onsemi / Fairchild |
MOSFETs N-Ch Power MOSFET 100V/22a/0.080 Ohm |
товару немає в наявності |