Технічний опис RFP30P06 FSC
Description: MOSFET P-CH 60V 30A TO220-3, Rds On (Max) @ Id, Vgs: 65mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 20 V, Drain to Source Voltage (Vdss): 60 V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4V @ 250µA.
Інші пропозиції RFP30P06
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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RFP30P06 | Виробник : onsemi |
 Description: MOSFET P-CH 60V 30A TO220-3Rds On (Max) @ Id, Vgs: 65mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 20 V Drain to Source Voltage (Vdss): 60 V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA |
товару немає в наявності |
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RFP30P06 | Виробник : onsemi / Fairchild |
MOSFET TO-247 P-Ch Power |
товару немає в наявності |