RFP50N05 Harris Corporation

Description: N-CHANNEL POWER MOSFET, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 250nA, Power Dissipation (Max): 132W (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bulk.