RFU10TF6S Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 10A TO220NFM
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 10A TO220NFM
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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Технічний опис RFU10TF6S Rohm Semiconductor
Description: DIODE GEN PURP 600V 10A TO220NFM, Packaging: Bulk, Package / Case: TO-220-2 Full Pack, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220NFM, Operating Temperature - Junction: 150°C (Max), Part Status: Not For New Designs, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 10 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.
Інші пропозиції RFU10TF6S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
RFU10TF6S | Виробник : ROHM Semiconductor | Small Signal Switching Diodes DIODE FAST REC 600V 10.0A TO-220 |
товару немає в наявності |