RFUS20TF6S Rohm Semiconductor

Description: DIODE GEN PURP 600V 20A TO220NFM, Technology: Standard, Reverse Recovery Time (trr): 35 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2 Full Pack, Packaging: Tube, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Not For New Designs, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: TO-220NFM, Current - Average Rectified (Io): 20A.