RFV8BM6SFHTL ROHM Semiconductor
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 102.29 грн |
| 10+ | 65.73 грн |
| 100+ | 51.15 грн |
| 500+ | 40.66 грн |
| 1000+ | 37.49 грн |
| 2500+ | 33.00 грн |
| 5000+ | 32.38 грн |
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Технічний опис RFV8BM6SFHTL ROHM Semiconductor
Description: DIODE GEN PURP 600V 8A TO252, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 8 A, Voltage - DC Reverse (Vr) (Max): 600 V, Grade: Automotive, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: TO-252, Current - Average Rectified (Io): 8A, Technology: Standard, Reverse Recovery Time (trr): 45 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції RFV8BM6SFHTL за ціною від 37.00 грн до 114.17 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RFV8BM6SFHTL | Rohm Semiconductor |
 Description: DIODE GEN PURP 600V 8A TO252Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 8 A Voltage - DC Reverse (Vr) (Max): 600 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-252 Current - Average Rectified (Io): 8A Technology: Standard Reverse Recovery Time (trr): 45 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 2305 шт: термін постачання 21-31 дні (днів) |
|
| RFV8BM6SFHTL |
|
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 8A TO252
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 600V 8A TO252
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 2305 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 114.17 грн |
| 10+ | 74.49 грн |
| 100+ | 52.47 грн |
| 500+ | 40.02 грн |
| 1000+ | 37.00 грн |