RGCL60TS60DGC11 Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: IGBT TRNCH FIELD 600V 48A TO247N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/186ns
Switching Energy: 770µJ (on), 1.11mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 111 W
на замовлення 169 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 305.09 грн |
| 10+ | 246.59 грн |
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Технічний опис RGCL60TS60DGC11 Rohm Semiconductor
Description: IGBT TRNCH FIELD 600V 48A TO247N, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 58 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 44ns/186ns, Switching Energy: 770µJ (on), 1.11mJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 68 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 48 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 111 W.
Інші пропозиції RGCL60TS60DGC11 за ціною від 138.05 грн до 331.36 грн
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RGCL60TS60DGC11 | Виробник : ROHM Semiconductor |
IGBT Transistors ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications. |
на замовлення 289 шт: термін постачання 21-30 дні (днів) |
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| RGCL60TS60DGC11 | Виробник : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 55W; TO247-3 Mounting: THT Collector current: 30A Gate-emitter voltage: ±30V Type of transistor: IGBT Case: TO247-3 Power dissipation: 55W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 68nC Collector-emitter voltage: 600V Turn-off time: 479ns Turn-on time: 95ns Pulsed collector current: 120A кількість в упаковці: 1 шт |
товар відсутній |
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| RGCL60TS60DGC11 | Виробник : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 55W; TO247-3 Mounting: THT Collector current: 30A Gate-emitter voltage: ±30V Type of transistor: IGBT Case: TO247-3 Power dissipation: 55W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 68nC Collector-emitter voltage: 600V Turn-off time: 479ns Turn-on time: 95ns Pulsed collector current: 120A |
товар відсутній |