RGCL60TS60DGC11 ROHM Semiconductor
Виробник: ROHM SemiconductorIGBTs ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
на замовлення 186 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 372.38 грн |
| 10+ | 281.36 грн |
| 100+ | 148.30 грн |
| 450+ | 146.04 грн |
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Технічний опис RGCL60TS60DGC11 ROHM Semiconductor
Description: IGBT TRENCH FS 600V 48A TO-247N, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 58 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 44ns/186ns, Switching Energy: 770µJ (on), 1.11mJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 68 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 48 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 111 W.
Інші пропозиції RGCL60TS60DGC11 за ціною від 252.26 грн до 392.50 грн
| Фото | Назва | Виробник | Інформація |
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Ціна | ||||||
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RGCL60TS60DGC11 | Виробник : Rohm Semiconductor |
Description: IGBT TRENCH FS 600V 48A TO-247N Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 44ns/186ns Switching Energy: 770µJ (on), 1.11mJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 68 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 111 W |
на замовлення 34 шт: термін постачання 21-31 дні (днів) |
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| RGCL60TS60DGC11 | Виробник : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 55W; TO247-3 Turn-off time: 479ns Collector current: 30A Gate-emitter voltage: ±30V Power dissipation: 55W Pulsed collector current: 120A Collector-emitter voltage: 600V Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Case: TO247-3 Mounting: THT Kind of package: tube Gate charge: 68nC Turn-on time: 95ns кількість в упаковці: 1 шт |
товару немає в наявності |
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| RGCL60TS60DGC11 | Виробник : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 55W; TO247-3 Turn-off time: 479ns Collector current: 30A Gate-emitter voltage: ±30V Power dissipation: 55W Pulsed collector current: 120A Collector-emitter voltage: 600V Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Case: TO247-3 Mounting: THT Kind of package: tube Gate charge: 68nC Turn-on time: 95ns |
товару немає в наявності |