Продукція > ROHM SEMICONDUCTOR > RGCL80TS60DGC11

RGCL80TS60DGC11 ROHM Semiconductor

Виробник: ROHM Semiconductor
IGBT Transistors IGBT HIGH VOLT AND CURRENT AP

на замовлення 450 шт:

термін постачання 21-30 дні (днів)

В кошику од. на суму грн.

Відгуки про товар

Написати відгук

Технічний опис RGCL80TS60DGC11 ROHM Semiconductor

Description: IGBT TRNCH FIELD 600V 65A TO247N, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 58 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 53ns/227ns, Switching Energy: 1.11mJ (on), 1.68mJ (off), Test Condition: 400V, 40A, 10Ohm, 15V, Gate Charge: 98 nC, Current - Collector (Ic) (Max): 65 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 148 W.

Інші пропозиції RGCL80TS60DGC11

Назва	Виробник	Інформація	Доступність	Ціна
RGCL80TS60DGC11	Виробник : ROHM SEMICONDUCTOR	Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 74W; TO247-3 Turn-off time: 565ns Type of transistor: IGBT Turn-on time: 114ns Pulsed collector current: 160A Collector current: 40A Gate-emitter voltage: ±30V Collector-emitter voltage: 600V Case: TO247-3 Mounting: THT Power dissipation: 74W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 98nC кількість в упаковці: 1 шт	товару немає в наявності	В кошику од. на суму грн.
RGCL80TS60DGC11	Виробник : Rohm Semiconductor	Description: IGBT TRNCH FIELD 600V 65A TO247N Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 53ns/227ns Switching Energy: 1.11mJ (on), 1.68mJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 98 nC Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 148 W	товару немає в наявності	В кошику од. на суму грн.
RGCL80TS60DGC11	Виробник : ROHM SEMICONDUCTOR	Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 74W; TO247-3 Turn-off time: 565ns Type of transistor: IGBT Turn-on time: 114ns Pulsed collector current: 160A Collector current: 40A Gate-emitter voltage: ±30V Collector-emitter voltage: 600V Case: TO247-3 Mounting: THT Power dissipation: 74W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 98nC	товару немає в наявності	В кошику од. на суму грн.