RGE60TS65DGC13 Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: 5S SHORT-CIRCUIT TOLERANCE, 650V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 166 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: TO-247GE
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/114ns
Switching Energy: 640µJ (on), 570µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 63 nC
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 166 W
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Технічний опис RGE60TS65DGC13 Rohm Semiconductor
Description: 5S SHORT-CIRCUIT TOLERANCE, 650V, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 166 ns, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A, Supplier Device Package: TO-247GE, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 40ns/114ns, Switching Energy: 640µJ (on), 570µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 63 nC, Current - Collector (Ic) (Max): 51 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 166 W.