RGF1J-E3/67A Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
| Кількість | Ціна |
|---|---|
| 1500+ | 15.97 грн |
| 3000+ | 13.33 грн |
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Технічний опис RGF1J-E3/67A Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO214BA, Packaging: Tape & Reel (TR), Package / Case: DO-214BA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 250 ns, Technology: Standard, Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-214BA (GF1), Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 600 V.
Інші пропозиції RGF1J-E3/67A за ціною від 9.42 грн до 31.65 грн
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Ціна |
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RGF1J-E3/67A | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214BA; Ufmax: 1.3V Capacitance: 8.5pF Mounting: SMD Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 250ns Leakage current: 0.1mA Load current: 1A Max. forward voltage: 1.3V Max. forward impulse current: 30A Max. off-state voltage: 0.6kV Quantity in set/package: 1500pcs. Kind of package: 7 inch reel Case: DO214BA Features of semiconductor devices: fast switching |
на замовлення 4618 шт: термін постачання 14-30 дні (днів) |
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RGF1J-E3/67A | Vishay General Semiconductor |
Small Signal Switching Diodes 1 Amp 600 Volt 250ns 30 Amp IFSM |
на замовлення 7676 шт: термін постачання 21-30 дні (днів) |
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RGF1J-E3/67A | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 1A DO214BA Packaging: Cut Tape (CT) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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| RGF1J-E3/67A |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214BA; Ufmax: 1.3V
Capacitance: 8.5pF
Mounting: SMD
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Leakage current: 0.1mA
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Quantity in set/package: 1500pcs.
Kind of package: 7 inch reel
Case: DO214BA
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214BA; Ufmax: 1.3V
Capacitance: 8.5pF
Mounting: SMD
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Leakage current: 0.1mA
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Quantity in set/package: 1500pcs.
Kind of package: 7 inch reel
Case: DO214BA
Features of semiconductor devices: fast switching
на замовлення 4618 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 24.61 грн |
| 25+ | 17.27 грн |
| 100+ | 13.80 грн |
| RGF1J-E3/67A |
|
Виробник: Vishay General Semiconductor
Small Signal Switching Diodes 1 Amp 600 Volt 250ns 30 Amp IFSM
Small Signal Switching Diodes 1 Amp 600 Volt 250ns 30 Amp IFSM
на замовлення 7676 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 29.62 грн |
| 16+ | 20.54 грн |
| 100+ | 15.12 грн |
| 1000+ | 11.39 грн |
| 1500+ | 10.97 грн |
| 3000+ | 9.42 грн |
| RGF1J-E3/67A |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE STANDARD 600V 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 31.65 грн |
| 15+ | 21.41 грн |
| 100+ | 19.75 грн |
| 500+ | 16.99 грн |