RGS30TSX2GC11 Rohm Semiconductor

Description: IGBT TRENCH FLD 1200V 30A TO247N, Power - Max: 267 W, Current - Collector Pulsed (Icm): 45 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 30 A, Gate Charge: 41 nC, Test Condition: 600V, 15A, 10Ohm, 15V, Switching Energy: 740µJ (on), 600µJ (off), Td (on/off) @ 25°C: 30ns/70ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-247N, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.