RGS40NL65DHRBTL ROHM
Виробник: ROHM
Description: ROHM - RGS40NL65DHRBTL - IGBT, AEC-Q101, 42 A, 1.65 V, 177 W, 650 V, TO-263L, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
Kollektor-Emitter-Sättigungsspannung: 1.65V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 177W
Bauform - Transistor: TO-263L
Dauerkollektorstrom: 42A
Anzahl der Pins: 3Pin(s)
Produktpalette: Field Stop Trench Series
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: No
Betriebstemperatur, max.: 175°C
SVHC: To Be Advised
| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 157.86 грн |
| 500+ | 142.10 грн |
| 1000+ | 122.19 грн |
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Технічний опис RGS40NL65DHRBTL ROHM
Description: IGBT TRENCH FS 650V 42A TO263L, Gate Charge: 28 nC, Test Condition: 400V, 20A, 10Ohm, 15V, Switching Energy: 560µJ (on), 490µJ (off), Td (on/off) @ 25°C: 24ns/87ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-263L, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A, Reverse Recovery Time (trr): 93 ns, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Power - Max: 177 W, Current - Collector Pulsed (Icm): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 42 A, Grade: Automotive.
Інші пропозиції RGS40NL65DHRBTL за ціною від 122.19 грн до 357.60 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RGS40NL65DHRBTL | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 42A TO263L Gate Charge: 28 nC Test Condition: 400V, 20A, 10Ohm, 15V Switching Energy: 560µJ (on), 490µJ (off) Td (on/off) @ 25°C: 24ns/87ns IGBT Type: Trench Field Stop Supplier Device Package: TO-263L Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Reverse Recovery Time (trr): 93 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Power - Max: 177 W Current - Collector Pulsed (Icm): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 42 A Grade: Automotive |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RGS40NL65DHRBTL | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 42A TO263L Td (on/off) @ 25°C: 24ns/87ns IGBT Type: Trench Field Stop Supplier Device Package: TO-263L Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Reverse Recovery Time (trr): 93 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Qualification: AEC-Q101 Power - Max: 177 W Current - Collector Pulsed (Icm): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 42 A Grade: Automotive Gate Charge: 28 nC Test Condition: 400V, 20A, 10Ohm, 15V Switching Energy: 560µJ (on), 490µJ (off) |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RGS40NL65DHRBTL | ROHM |
Description: ROHM - RGS40NL65DHRBTL - IGBT, AEC-Q101, 42 A, 1.65 V, 177 W, 650 V, TO-263L, 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y Kollektor-Emitter-Sättigungsspannung: 1.65V usEccn: EAR99 euEccn: NLR Verlustleistung: 177W Bauform - Transistor: TO-263L Dauerkollektorstrom: 42A Anzahl der Pins: 3Pin(s) Produktpalette: Field Stop Trench Series Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C SVHC: To Be Advised |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RGS40NL65DHRBTL | ROHM Semiconductor |
IGBTs 8us Short-Circuit Tolerance, 650V 20A, FRD Built-in, Automotive Field Stop Trench IGBT: RGS40NL65DHRB is a 8 s SCSOA guaranteed IGBT, suitable for general inverter for automotive and industrial use. This product complies AEC-Q101 qualification. |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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| RGS40NL65DHRBTL |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 42A TO263L
Gate Charge: 28 nC
Test Condition: 400V, 20A, 10Ohm, 15V
Switching Energy: 560µJ (on), 490µJ (off)
Td (on/off) @ 25°C: 24ns/87ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-263L
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Reverse Recovery Time (trr): 93 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Power - Max: 177 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 42 A
Grade: Automotive
Description: IGBT TRENCH FS 650V 42A TO263L
Gate Charge: 28 nC
Test Condition: 400V, 20A, 10Ohm, 15V
Switching Energy: 560µJ (on), 490µJ (off)
Td (on/off) @ 25°C: 24ns/87ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-263L
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Reverse Recovery Time (trr): 93 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Power - Max: 177 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 42 A
Grade: Automotive
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 159.04 грн |
| RGS40NL65DHRBTL |
|
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 42A TO263L
Td (on/off) @ 25°C: 24ns/87ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-263L
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Reverse Recovery Time (trr): 93 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Power - Max: 177 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 42 A
Grade: Automotive
Gate Charge: 28 nC
Test Condition: 400V, 20A, 10Ohm, 15V
Switching Energy: 560µJ (on), 490µJ (off)
Description: IGBT TRENCH FS 650V 42A TO263L
Td (on/off) @ 25°C: 24ns/87ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-263L
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Reverse Recovery Time (trr): 93 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Power - Max: 177 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 42 A
Grade: Automotive
Gate Charge: 28 nC
Test Condition: 400V, 20A, 10Ohm, 15V
Switching Energy: 560µJ (on), 490µJ (off)
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 308.32 грн |
| 10+ | 248.82 грн |
| 25+ | 235.01 грн |
| 100+ | 188.95 грн |
| 250+ | 178.42 грн |
| 500+ | 167.89 грн |
| RGS40NL65DHRBTL |
|
Виробник: ROHM
Description: ROHM - RGS40NL65DHRBTL - IGBT, AEC-Q101, 42 A, 1.65 V, 177 W, 650 V, TO-263L, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.65V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 177W
Bauform - Transistor: TO-263L
Dauerkollektorstrom: 42A
Anzahl der Pins: 3Pin(s)
Produktpalette: Field Stop Trench Series
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
SVHC: To Be Advised
Description: ROHM - RGS40NL65DHRBTL - IGBT, AEC-Q101, 42 A, 1.65 V, 177 W, 650 V, TO-263L, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.65V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 177W
Bauform - Transistor: TO-263L
Dauerkollektorstrom: 42A
Anzahl der Pins: 3Pin(s)
Produktpalette: Field Stop Trench Series
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
SVHC: To Be Advised
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 315.72 грн |
| 10+ | 219.07 грн |
| 100+ | 157.86 грн |
| 500+ | 142.10 грн |
| 1000+ | 122.19 грн |
| RGS40NL65DHRBTL |
|
Виробник: ROHM Semiconductor
IGBTs 8us Short-Circuit Tolerance, 650V 20A, FRD Built-in, Automotive Field Stop Trench IGBT: RGS40NL65DHRB is a 8 s SCSOA guaranteed IGBT, suitable for general inverter for automotive and industrial use. This product complies AEC-Q101 qualification.
IGBTs 8us Short-Circuit Tolerance, 650V 20A, FRD Built-in, Automotive Field Stop Trench IGBT: RGS40NL65DHRB is a 8 s SCSOA guaranteed IGBT, suitable for general inverter for automotive and industrial use. This product complies AEC-Q101 qualification.
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 357.60 грн |
| 10+ | 252.46 грн |
| 100+ | 158.09 грн |
| 500+ | 153.26 грн |
| 1000+ | 130.47 грн |