RGS60TS65DHRC11 ROHM SEMICONDUCTOR
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 111W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 111W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Turn-on time: 46ns
Turn-off time: 290ns
Features of semiconductor devices: integrated anti-parallel diode
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 534.85 грн |
| 10+ | 329.99 грн |
| 30+ | 293.51 грн |
| 90+ | 288.53 грн |
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Технічний опис RGS60TS65DHRC11 ROHM SEMICONDUCTOR
Description: IGBT TRENCH FS 650V 56A TO-247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 103 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 28ns/104ns, Switching Energy: 660µJ (on), 810µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 36 nC, Current - Collector (Ic) (Max): 56 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 223 W.
Інші пропозиції RGS60TS65DHRC11 за ціною від 259.04 грн до 547.86 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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RGS60TS65DHRC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 56A TO-247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 103 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 28ns/104ns Switching Energy: 660µJ (on), 810µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 36 nC Current - Collector (Ic) (Max): 56 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 90 A Power - Max: 223 W |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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RGS60TS65DHRC11 | ROHM Semiconductor |
IGBTs 8s Short-Circuit Tolerance, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive |
на замовлення 244 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||
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RGS60TS65DHRC11 | ROHM |
Description: ROHM - RGS60TS65DHRC11 - IGBT, 56 A, 1.65 V, 223 W, 650 V, TO-247N, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.65V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 223W Bauform - Transistor: TO-247N Dauerkollektorstrom: 56A Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C SVHC: Lead (23-Jan-2024) |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
| RGS60TS65DHRC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 56A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/104ns
Switching Energy: 660µJ (on), 810µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 36 nC
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 223 W
Description: IGBT TRENCH FS 650V 56A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/104ns
Switching Energy: 660µJ (on), 810µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 36 nC
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 223 W
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 547.86 грн |
| 30+ | 307.49 грн |
| 120+ | 259.04 грн |
| RGS60TS65DHRC11 |
|
Виробник: ROHM Semiconductor
IGBTs 8s Short-Circuit Tolerance, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive
IGBTs 8s Short-Circuit Tolerance, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive
на замовлення 244 шт:
термін постачання 21-30 дні (днів)
| RGS60TS65DHRC11 |
|
Виробник: ROHM
Description: ROHM - RGS60TS65DHRC11 - IGBT, 56 A, 1.65 V, 223 W, 650 V, TO-247N, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.65V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 223W
Bauform - Transistor: TO-247N
Dauerkollektorstrom: 56A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: No
Betriebstemperatur, max.: 175°C
SVHC: Lead (23-Jan-2024)
Description: ROHM - RGS60TS65DHRC11 - IGBT, 56 A, 1.65 V, 223 W, 650 V, TO-247N, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.65V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 223W
Bauform - Transistor: TO-247N
Dauerkollektorstrom: 56A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: No
Betriebstemperatur, max.: 175°C
SVHC: Lead (23-Jan-2024)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)