RGS80TS65DHRC11 Rohm Semiconductor

Description: IGBT TRENCH FS 650V 73A TO-247N, Power - Max: 272 W, Current - Collector Pulsed (Icm): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 73 A, Gate Charge: 48 nC, Test Condition: 400V, 40A, 10Ohm, 15V, Switching Energy: 1.05mJ (on), 1.03mJ (off), Td (on/off) @ 25°C: 37ns/112ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-247N, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A, Reverse Recovery Time (trr): 103 ns, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.