RGT50TM65DGC9 ROHM Semiconductor
Виробник: ROHM SemiconductorIGBTs RGT50TM65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.
на замовлення 994 шт:
термін постачання 175-184 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 191.33 грн |
| 25+ | 149.38 грн |
| 100+ | 113.20 грн |
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Технічний опис RGT50TM65DGC9 ROHM Semiconductor
Description: IGBT TRENCH FS 650V 21A TO220NFM, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 58 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A, Supplier Device Package: TO-220NFM, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 27ns/88ns, Test Condition: 400V, 25A, 10Ohm, 15V, Gate Charge: 49 nC, Part Status: Active, Current - Collector (Ic) (Max): 21 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 75 A, Power - Max: 47 W.
Інші пропозиції RGT50TM65DGC9 за ціною від 109.52 грн до 313.99 грн
| Фото | Назва | Виробник | Інформація |
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RGT50TM65DGC9 | Виробник : Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 21A TO220NFM Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: TO-220NFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/88ns Test Condition: 400V, 25A, 10Ohm, 15V Gate Charge: 49 nC Part Status: Active Current - Collector (Ic) (Max): 21 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 75 A Power - Max: 47 W |
на замовлення 864 шт: термін постачання 21-31 дні (днів) |
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| RGT50TM65DGC9 | Виробник : ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 13A; 23W; TO220NFM Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 13A Power dissipation: 23W Case: TO220NFM Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: SMD Gate charge: 49nC Kind of package: tube Turn-on time: 65ns Turn-off time: 210ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товару немає в наявності |
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| RGT50TM65DGC9 | Виробник : ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 13A; 23W; TO220NFM Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 13A Power dissipation: 23W Case: TO220NFM Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: SMD Gate charge: 49nC Kind of package: tube Turn-on time: 65ns Turn-off time: 210ns Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |