RGTH00TK65DGC11 Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 35A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 225 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/143ns
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 94 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 72 W
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 316.66 грн |
| 30+ | 168.37 грн |
| 120+ | 138.24 грн |
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Технічний опис RGTH00TK65DGC11 Rohm Semiconductor
Description: IGBT TRENCH FS 650V 35A TO-3PFM, Packaging: Tube, Package / Case: TO-3PFM, SC-93-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 225 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: TO-3PFM, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 39ns/143ns, Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 94 nC, Part Status: Active, Current - Collector (Ic) (Max): 35 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 72 W.
Інші пропозиції RGTH00TK65DGC11
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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RGTH00TK65DGC11 | ROHM Semiconductor |
IGBTs High-Speed Switching Type, 650V 50A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT |
на замовлення 415 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| RGTH00TK65DGC11 |
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Виробник: ROHM Semiconductor
IGBTs High-Speed Switching Type, 650V 50A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT
IGBTs High-Speed Switching Type, 650V 50A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT
на замовлення 415 шт:
термін постачання 21-30 дні (днів)


