| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 522.02 грн |
| 10+ | 344.18 грн |
| 100+ | 211.87 грн |
Товар під замовлення
Немає на нашому складі — привозимо зі складу постачальника після оформлення замовлення.
термін постачання:
31-40 дні (днів)
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Технічний опис RGTH00TS65DGC11 ROHM Semiconductor
Description: IGBT TRNCH FIELD 650V 85A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 54 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 39ns/143ns, Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 94 nC, Current - Collector (Ic) (Max): 85 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 277 W.
Інші пропозиції RGTH00TS65DGC11
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
RGTH00TS65DGC11 | Rohm Semiconductor |
 Description: IGBT TRNCH FIELD 650V 85A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 54 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 39ns/143ns Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 94 nC Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 277 W |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. |
| RGTH00TS65DGC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3 Type of transistor: IGBT Power dissipation: 138W Case: TO247-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 650V Gate charge: 94nC Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 200A Turn-on time: 102ns Turn-off time: 221ns Gate-emitter voltage: ±30V Collector current: 50A |
товару немає в наявності |
В кошику од. на суму грн. |
| RGTH00TS65DGC11 |
|
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 85A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/143ns
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 277 W
Description: IGBT TRNCH FIELD 650V 85A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/143ns
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 277 W
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику
од. на суму грн.
| RGTH00TS65DGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3
Type of transistor: IGBT
Power dissipation: 138W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 94nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Turn-on time: 102ns
Turn-off time: 221ns
Gate-emitter voltage: ±30V
Collector current: 50A
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3
Type of transistor: IGBT
Power dissipation: 138W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 94nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Turn-on time: 102ns
Turn-off time: 221ns
Gate-emitter voltage: ±30V
Collector current: 50A
товару немає в наявності
В кошику
од. на суму грн.