RGTH40TK65DGC11 Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: IGBT TRNCH FIELD 650V 23A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/73ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 56 W
на замовлення 440 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 478.52 грн |
| 30+ | 263.30 грн |
| 120+ | 219.78 грн |
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Технічний опис RGTH40TK65DGC11 Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 23A TO3PFM, Packaging: Tube, Package / Case: TO-3PFM, SC-93-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 58 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A, Supplier Device Package: TO-3PFM, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 22ns/73ns, Test Condition: 400V, 20A, 10Ohm, 15V, Gate Charge: 40 nC, Part Status: Active, Current - Collector (Ic) (Max): 23 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 56 W.
Інші пропозиції RGTH40TK65DGC11
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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RGTH40TK65DGC11 | Виробник : ROHM Semiconductor |
IGBTs High-Speed Switching Type, 650V 20A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT |
товару немає в наявності |