Технічний опис RGTH40TS65DGC11 ROHM Semiconductor
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 20A; 72W; TO247-3, Type of transistor: IGBT, Collector-emitter voltage: 650V, Collector current: 20A, Power dissipation: 72W, Case: TO247-3, Gate-emitter voltage: ±30V, Pulsed collector current: 80A, Mounting: THT, Gate charge: 40nC, Kind of package: tube, Features of semiconductor devices: integrated anti-parallel diode, Turn-off time: 141ns, Turn-on time: 47ns.
Інші пропозиції RGTH40TS65DGC11
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
RGTH40TS65DGC11 | Rohm Semiconductor |
 Description: IGBT TRNCH FIELD 650V 40A TO247N |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. |
| RGTH40TS65DGC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 72W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 72W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 80A Mounting: THT Gate charge: 40nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-off time: 141ns Turn-on time: 47ns |
товару немає в наявності |
В кошику од. на суму грн. |
| RGTH40TS65DGC11 |
|
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 40A TO247N
Description: IGBT TRNCH FIELD 650V 40A TO247N
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику
од. на суму грн.
| RGTH40TS65DGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 72W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 72W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 141ns
Turn-on time: 47ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 72W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 72W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 141ns
Turn-on time: 47ns
товару немає в наявності
В кошику
од. на суму грн.