Технічний опис RGTV00TS65DGC11 ROHM SEMICONDUCTOR
Description: IGBT TRNCH FIELD 650V 95A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 102 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 41ns/142ns, Switching Energy: 1.17mJ (on), 940µJ (off), Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 104 nC, Current - Collector (Ic) (Max): 95 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 276 W.
Інші пропозиції RGTV00TS65DGC11
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RGTV00TS65DGC11 | Виробник : Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 102 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 41ns/142ns Switching Energy: 1.17mJ (on), 940µJ (off) Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 104 nC Current - Collector (Ic) (Max): 95 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 276 W |
товару немає в наявності |
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RGTV00TS65DGC11 | Виробник : ROHM Semiconductor |
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товару немає в наявності |