
RGTV00TS65GC11 Rohm Semiconductor

Description: IGBT TRNCH FIELD 650V 95A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 41ns/142ns
Switching Energy: 1.17mJ (on), 940µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 104 nC
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 276 W
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис RGTV00TS65GC11 Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 95A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 41ns/142ns, Switching Energy: 1.17mJ (on), 940µJ (off), Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 104 nC, Current - Collector (Ic) (Max): 95 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 276 W.
Інші пропозиції RGTV00TS65GC11
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
---|---|---|---|---|---|
![]() |
RGTV00TS65GC11 | Виробник : ROHM Semiconductor |
![]() |
товару немає в наявності |