RGTV60TK65DGVC11 ROHM Semiconductor
на замовлення 450 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 462.84 грн |
| 10+ | 330.70 грн |
| 100+ | 237.88 грн |
| 450+ | 214.55 грн |
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Технічний опис RGTV60TK65DGVC11 ROHM Semiconductor
Description: IGBT TRNCH FIELD 650V 33A TO3PFM, Packaging: Tube, Package / Case: TO-3PFM, SC-93-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 95 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A, Supplier Device Package: TO-3PFM, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 33ns/105ns, Switching Energy: 570µJ (on), 500µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 64 nC, Part Status: Active, Current - Collector (Ic) (Max): 33 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 76 W.
Інші пропозиції RGTV60TK65DGVC11
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| RGTV60TK65DGVC11 | Виробник : ROHM SEMICONDUCTOR |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 20A; 38W; TO3PFM Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 38W Case: TO3PFM Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 64nC Kind of package: tube Turn-on time: 45ns Turn-off time: 201ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товару немає в наявності |
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RGTV60TK65DGVC11 | Виробник : Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 33A TO3PFM Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 95 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 33ns/105ns Switching Energy: 570µJ (on), 500µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 64 nC Part Status: Active Current - Collector (Ic) (Max): 33 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 76 W |
товару немає в наявності |
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| RGTV60TK65DGVC11 | Виробник : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 38W; TO3PFM Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 38W Case: TO3PFM Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 64nC Kind of package: tube Turn-on time: 45ns Turn-off time: 201ns Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |