RGTVX6TS65GC11 Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 144A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 80A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/201ns
Switching Energy: 2.65mJ (on), 1.8mJ (off)
Test Condition: 400V, 80A, 10Ohm, 15V
Gate Charge: 171 nC
Current - Collector (Ic) (Max): 144 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 320 A
Power - Max: 404 W
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Технічний опис RGTVX6TS65GC11 Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 144A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 80A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 45ns/201ns, Switching Energy: 2.65mJ (on), 1.8mJ (off), Test Condition: 400V, 80A, 10Ohm, 15V, Gate Charge: 171 nC, Current - Collector (Ic) (Max): 144 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 320 A, Power - Max: 404 W.
Інші пропозиції RGTVX6TS65GC11 за ціною від 238.52 грн до 556.56 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||
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RGTVX6TS65GC11 | Виробник : ROHM Semiconductor |
IGBTs 650V 80A TO-247N Field Stp Trnch IGBT |
на замовлення 493 шт: термін постачання 21-30 дні (днів) |
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| RGTVX6TS65GC11 | Виробник : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 80A; 202W; TO247-3 Mounting: THT Case: TO247-3 Kind of package: tube Turn-off time: 298ns Collector current: 80A Gate-emitter voltage: ±30V Power dissipation: 202W Pulsed collector current: 320A Collector-emitter voltage: 650V Type of transistor: IGBT Gate charge: 171nC Turn-on time: 83ns |
товару немає в наявності |