RGW50NL65DHRBTL Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: HIGH-SPEED FAST SWITCHING TYPE,
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 71 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-263L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31ns/119ns
Switching Energy: 110µJ (on), 230µJ (off)
Test Condition: 400V, 12.5A, 10Ohm, 15V
Gate Charge: 73 nC
Grade: Automotive
Current - Collector (Ic) (Max): 57 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 165 W
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 133.45 грн |
Відгуки про товар
Написати відгук
Технічний опис RGW50NL65DHRBTL Rohm Semiconductor
Description: HIGH-SPEED FAST SWITCHING TYPE,, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 71 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A, Supplier Device Package: TO-263L, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 31ns/119ns, Switching Energy: 110µJ (on), 230µJ (off), Test Condition: 400V, 12.5A, 10Ohm, 15V, Gate Charge: 73 nC, Grade: Automotive, Current - Collector (Ic) (Max): 57 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 165 W, Qualification: AEC-Q101.
Інші пропозиції RGW50NL65DHRBTL за ціною від 118.9 грн до 276.66 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
RGW50NL65DHRBTL | Виробник : Rohm Semiconductor |
Description: HIGH-SPEED FAST SWITCHING TYPE, Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 71 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A Supplier Device Package: TO-263L IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 31ns/119ns Switching Energy: 110µJ (on), 230µJ (off) Test Condition: 400V, 12.5A, 10Ohm, 15V Gate Charge: 73 nC Grade: Automotive Current - Collector (Ic) (Max): 57 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 100 A Power - Max: 165 W Qualification: AEC-Q101 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
RGW50NL65DHRBTL | Виробник : ROHM Semiconductor |
IGBT Transistors High-Speed Fast Switching Type, 650V 25A, FRD Built-in, LPDL, Field Stop Trench IGBT for Automotive: RGW50NL65DHRB is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Indu |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
|