RGW50TS65DGC11 Rohm Semiconductor

Description: IGBT TRENCH FS 650V 50A TO-247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 35ns/102ns, Switching Energy: 390µJ (on), 430µJ (off), Test Condition: 400V, 25A, 10Ohm, 15V, Gate Charge: 73 nC, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 156 W.