RGW80TS65GC11 Rohm Semiconductor

Description: IGBT TRNCH FIELD 650V 78A TO247N, Power - Max: 214 W, Current - Collector Pulsed (Icm): 160 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 78 A, Part Status: Not For New Designs, Gate Charge: 110 nC, Test Condition: 400V, 40A, 10Ohm, 15V, Switching Energy: 760µJ (on), 720µJ (off), Td (on/off) @ 25°C: 44ns/143ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-247N, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.