Технічний опис RGWS00TS65DGC13 Rohm Semiconductor
Description: IGBT TRENCH FS 650V 88A TO-247G, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 88 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A, Supplier Device Package: TO-247G, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 46ns/145ns, Switching Energy: 980µJ (on), 910µJ (off), Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 108 nC, Current - Collector (Ic) (Max): 88 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 245 W.
Інші пропозиції RGWS00TS65DGC13 за ціною від 175.01 грн до 468.04 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
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RGWS00TS65DGC13 | Rohm Semiconductor |
 Trans IGBT Chip N-CH 650V 88A 245W 3-Pin(3+Tab) TO-247N Tube |
на замовлення 115 шт: термін постачання 21-31 дні (днів) |
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RGWS00TS65DGC13 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 88A TO-247G Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 88 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Supplier Device Package: TO-247G IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 46ns/145ns Switching Energy: 980µJ (on), 910µJ (off) Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 108 nC Current - Collector (Ic) (Max): 88 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 245 W |
на замовлення 565 шт: термін постачання 21-31 дні (днів) |
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| RGWS00TS65DGC13 |
|
Виробник: Rohm Semiconductor
Trans IGBT Chip N-CH 650V 88A 245W 3-Pin(3+Tab) TO-247N Tube
Trans IGBT Chip N-CH 650V 88A 245W 3-Pin(3+Tab) TO-247N Tube
на замовлення 115 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 32+ | 451.41 грн |
| 49+ | 288.76 грн |
| 61+ | 233.37 грн |
| 100+ | 210.26 грн |
| RGWS00TS65DGC13 |
|
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 88A TO-247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 88 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 46ns/145ns
Switching Energy: 980µJ (on), 910µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 108 nC
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 245 W
Description: IGBT TRENCH FS 650V 88A TO-247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 88 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 46ns/145ns
Switching Energy: 980µJ (on), 910µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 108 nC
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 245 W
на замовлення 565 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 468.04 грн |
| 30+ | 259.46 грн |
| 120+ | 217.34 грн |
| 510+ | 175.01 грн |